?2001 fairchild semiconductor corporation hgtp2n120cnd, HGT1S2N120CNDS rev. b hgtp2n120cnd, HGT1S2N120CNDS 13a, 1200v, npt series n-channel igbts with anti-parallel hyperfast diodes the hgtp2n120cnd and HGT1S2N120CNDS are n on- p unch t hrough (npt) igbt designs. they are new members of the mos gated high voltage switching igbt family. igbts combine the best features of mosfets and bipolar transistors. this device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the igbt used is the development type ta49313. the diode used is the development type ta49056 (part number rhrd4120). the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49311. symbol features ? 13a, 1200v, t c = 25 o c 1200v switching soa capability typical fall time. . . . . . . . . . . . . . . . 360ns at t j = 150 o c short circuit rating low conduction loss thermal impedance spice model temperature compensating saber? model www.fairchildsemi.com related literature - tb334 ?guidelines for soldering surface mount components to pc boards? packaging jedec to-220ab (alternate version) jedec to-263ab ordering information part number package brand hgtp2n120cnd to-220ab 2n120cnd HGT1S2N120CNDS to-263ab 2n120cnd note: when ordering, use the entire part number. add the suffix 9a to obtain the to-263ab variant in t ape and reel, i.e., HGT1S2N120CNDS9a. e g c g c e collector (flange) g collector e (flange) fairchild corporation igbt product is cove red by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet december 2001
?2001 fairchild semiconductor corporation hgtp2n120cnd, HGT1S2N120CNDS rev. b absolute maximum ratings t c = 25 o c, unless otherwise specified hgtp2n120cnd, HGT1S2N120CNDS units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 1200 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 13 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 7a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 20 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 13a at 1200v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 104 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 300 o c package body for 10s, see tech brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 260 o c short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 8 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. pulse width limited by maximum junction temperature. 2. v ce(pk) = 840v, t j = 125 o c, r g = 51 ? . electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 1200 - - v collector to emitter leakage current i ces v ce = bv ces t c = 25 o c - - 100 a t c = 125 o c - 100 - a t c = 150 o c--1.0ma collector to emitter saturation voltage v ce(sat) i c = 2.6a, v ge = 15v t c = 25 o c - 2.05 2.40 v t c = 150 o c - 2.75 3.50 v gate to emitter threshold voltage v ge(th) i c = 45 a, v ce = v ge 6.4 6.7 - v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 51 ?, v ge = 15v, l = 5mh, v ce(pk) = 1200v 13 - - a gate to emitter plateau voltage v gep i c = 2.6a, v ce = 0.5 bv ces - 10.2 - v on-state gate charge q g(on) i c = 2.6a, v ce = 0.5 bv ces v ge = 15v - 30 36 nc v ge = 20v - 36 43 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c, i ce = 2.6a, v ce = 0.8 bv ces , v ge = 15v, r g = 51 ? , l = 5mh test circuit (figure 20) -2530ns current rise time t ri -1115ns current turn-off delay time t d(off)i - 205 220 ns current fall time t fi - 260 320 ns turn-on energy e on - 425 590 j turn-off energy (note 3) e off - 355 390 j current turn-on delay time t d(on)i igbt and diode at t j = 150 o c, i ce = 2.6a, v ce = 0.8 bv ces , v ge = 15v, r g = 51 ? , l = 5mh test circuit (figure 20) -2125ns current rise time t ri -1115ns current turn-off delay time t d(off)i - 225 240 ns current fall time t fi - 360 420 ns turn-on energy e on - 800 1100 j turn-off energy (note 3) e off - 530 580 j hgtp2n120cnd, HGT1S2N120CNDS
?2001 fairchild semiconductor corporation hgtp2n120cnd, HGT1S2N120CNDS rev. b diode forward voltage v ec i ec = 2.6a - 1.8 2.0 v diode reverse recovery time t rr i ec = 1a, dl ec /dt = 200a/ s - 31 35 ns i ec = 2.6a, dl ec /dt = 200a/ s - 47 52 ns thermal resistance junction to case r jc igbt - - 1.20 o c/w diode - - 2.5 o c/w note: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trail ing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time electrical specifications t c = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units t c , case temperature ( o c) i ce , dc collector current (a) 50 0 25 75 100 125 150 2 10 v ge = 15v 12 14 8 6 4 v ce , collector to emitter voltage (v) 1400 10 0 i ce , collector to emitter current (a) 4 6 600 800 400 200 1000 1200 0 12 14 8 2 t j = 150 o c, r g = 51 ? , v ge = 15v, l = 5mh 16 f max , operating frequency (khz) i ce , collector to emitter current (a) 10 5 50 100 200 f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 1.2 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on + e off ) t c v ge 12v 15v 110 o c 110 o c t c v ge 75 o c 12v 75 o c 15v t j = 150 o c, r g = 51 ? , v ge = 15v, l = 5mh 134 2 v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 20 30 40 50 10 0 20 30 40 50 10 0 10 14 15 13 12 11 v ce = 840v, r g = 51 ? , t j = 125 o c i sc t sc hgtp2n120cnd, HGT1S2N120CNDS
?2001 fairchild semiconductor corporation hgtp2n120cnd, HGT1S2N120CNDS rev. b figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current typical performance curves unless otherwise specified (continued) 012 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 2 4 345 10 8 6 t c = 25 o c t c = 150 o c 250 s pulse test duty cycle <0.5%, v ge = 12v t c = -55 o c 6 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 2 4 6 012345 8 0 10 t c = 25 o c t c = 150 o c t c = -55 o c duty cycle <0.5%, v ge = 15v 250 s pulse test e on , turn-on energy loss ( j) 1500 i ce , collector to emitter current (a) 1000 500 2.5 1.5 3.5 3.0 2.0 1.0 4.0 4.5 5.0 2000 0 t j = 150 o c, v ge = 12v, v ge = 15v r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, v ge = 12v, v ge = 15v i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 3.0 2.0 1.5 2.5 3.5 1.0 300 200 400 500 4.5 4.0 600 700 800 900 5.0 r g = 51 ? , l = 5mh, v ce = 960v t j = 150 o c, v ge = 12v or 15v t j = 25 o c, v ge = 12v or 15v 100 i ce , collector to emitter current (a) t di , turn-on delay time (ns) 1.5 1.0 2.0 3.0 20 30 2.5 3.5 4.5 4.0 5.0 40 35 25 15 r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 15v t j = 25 o c, t j = 150 o c, v ge = 12v 45 i ce , collector to emitter current (a) t ri , rise time (ns) 0 10 15 40 20 2.0 1.0 30 1.5 3.5 3.0 2.5 25 5.0 4.5 4.0 35 r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 12v t j = 25 o c, t j = 150 o c, v ge = 15v 5 hgtp2n120cnd, HGT1S2N120CNDS
?2001 fairchild semiconductor corporation hgtp2n120cnd, HGT1S2N120CNDS rev. b figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms figure 15. capacitance vs collector to emitter voltage figure 16. collector to emitter on-state voltage typical performance curves unless otherwise specified (continued) 5.0 100 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 400 350 300 250 200 1.01.52.02.53.03.54.04.5 150 v ge = 12v, v ge = 15v, t j = 150 o c r g = 51 ? , l = 5mh, v ce = 960v v ge = 12v, v ge = 15v, t j = 25 o c i ce , collector to emitter current (a) t fi , fall time (ns) 500 300 700 400 600 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t j = 150 o c, v ge = 12v or 15v r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, v ge = 12v or 15v 200 100 i ce , collector to emitter current (a) 0 5 10 15 13 78910 12 v ge , gate to emitter voltage (v) 11 20 25 30 14 15 35 250 s pulse test duty cycle <0.5%, v ce = 20v t c = 150 o c t c = -55 o c t c = 25 o c 40 v ge , gate to emitter voltage (v) q g , gate charge (nc) 14 16 30 25 20 10 12 15 10 5 0 i g (ref) = 1ma, r l = 260 ? , t c = 25 o c v ce = 400v v ce = 800v v ce = 1200v 8 6 4 2 0 v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 30 50 c, capacitance (nf) 70 90 frequency = 1mhz c ies c oes c res 80 60 40 20 10 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 v ge = 10v v ge = 15v duty cycle <0.5%, t c = 110 o c 250 s pulse test hgtp2n120cnd, HGT1S2N120CNDS
?2001 fairchild semiconductor corporation hgtp2n120cnd, HGT1S2N120CNDS rev. b figure 17. normalized transient thermal response, junction to case figure 18. diode forward current vs forward voltage drop figure 19. recovery times vs forward current test circuit and waveforms figure 20. inductive switching test circui t figure 21. switching test waveforms typical performance curves unless otherwise specified (continued) t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 -4 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.5 0.2 0.1 0.05 0.02 0.01 t 1 t 2 p d 10 20 0.1 i f , forward current (a) 1 v f , forward voltage (v) 1.5 2.0 2.5 0.5 1.0 25 o c 150 o c -55 o c t, recovery time (ns) i f , forward current (a) t a t b t c = 25 o c, dl ec / dt = 200a/ s t rr 045 13 2 60 70 40 30 20 10 50 r g = 51 ? l = 5mh v dd = 960v + - rhrd4120 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on hgtp2n120cnd, HGT1S2N120CNDS
?2001 fairchild semiconductor corporation hgtp2n120cnd, HGT1S2N120CNDS rev. b handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static c harge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precauti ons are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 21. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on ). the allowable dissipation (p d ) is defined by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on and e off are defined in the switching waveforms shown in figure 21. e on is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtp2n120cnd, HGT1S2N120CNDS
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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